Dicing Blade
Diamond wheel for grinding SiC surfaces "M-cloud"
- Business Units
- Electronics & Semiconductor
- Types of tools
- Grinding Tools
- Processing method
- Grinding
- Work
- Semiconductor materials, Glass, Ceramics
- Bond
- Metal, Vitrified, Resin
Product Details
This is a diamond wheel for surface grinding of various wafers such as semiconductor materials and electronic device materials. We provide the most suitable wheels for each material. It minimizes machining damage, improves machining efficiency, and contributes to the reduction of machining costs. It can be customized according to the customer's needs.
Application
- Silicon semiconductor wafer
- Compound semiconductor wafers
- Wide bandgap semiconductor wafers (SiC/GaN)
- SAW filter wafers (LT/LN)
- Sapphire/Glass wafer
- Packaged resin (WLP, etc. )
- Ceramic wafers (Al2O3/AIN, etc. )
Bond Type
- Vitrified
- Resin
- Metal
Product characteristics
feature
Provide various wheels for each applications
Modify wheel specifications upon request of customers
Product Lineup
Resin Wheels
Recommended for Silicon Wafer, Heat sink substrate, and Encapsulation materials
Vitrified wheels
Recommended for almost all "electronic components and semiconductor's substrates and materials
Metal wheel
Recommended for Support substrate, Heat sink substrate, Sapphire, and Encapsulation materials
Target Work
- Semiconductor substrate materials
- Silicon
Silicon Carbide
Gallium Nitride
Gallium Oxide
Sapphire
Indium Phosphide
Other Compound Semiconductors - Electronic component materials
- Lithium Tantalate
Lithium Niobate - Encapsulation materials
- Epoxy Molding Compounds
Polyimide Resin
EMC and Copper electrode - Support substrate
- Borosilicate Glass
Non-alkali Glass
Quartz Glass
Other glass - Heat sink substrate
- Sintered Aluminum Nitride
Sintered Silicon Nitride
Sintered Silicon Carbide
Sintered Alumina Oxide
Other Ceramics
Other optimal specifications are available upon request.
Example of high count vitrified wheel processing
Comparison of surface roughness and damage depth after grinding various semiconductor substrate materials with a high number wheel
| Work material | Mesh size | Bond Type | Surface roughness | Damage depth |
|---|---|---|---|---|
| Φ12inch-Si | #30000 | Vitrified | 1~2nm | ≦100nm |
| Φ6inch-LT | #8000 | Vitrified | 3~5nm | ≦250nm |
| Φ6inch-LN | #8000 | Vitrified | 2~4nm | ≦350nm |
| Φ6inch-SiC | #30000 | Vitrified | ≦1nm | ≦100nm |
| Φ2inch-GaN | #30000 | Vitrified | ≦1nm | ≦450nm |
Other Processing Examples
EMC and Cu
No drag, etc. even with high Cu occupancy.
Less step difference between EMC and Cu.
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