Compound semiconductors
[Compound semiconductors]
The market has expanded for GaP (gallium phosphide), GaAs (gallium arsenide), GaN (gallium nitride), AlN (aluminum nitride) and SiC (silicon carbide) as semiconductor materials. For example, they are used for blue light-emitting diodes, blue-violet semiconductor lasers, and other optical devices.
As compound semiconductors are more vulnerable to chipping than silicon semiconductors, fine blades (#3000-5000) are usually used. Therefore, blades can break without sufficient time taken for precutting.
[Adaptive blades]
[Case study]
The following is an example of the processing of compound semiconductors. We provide appropriate blades and processing techniques covering precutting to solve problems.
Processing requirements
Blade | Electroforming Blades (Hub-Type) Mesh Size #5000 O.D. φ55.58mm Blade thickness at 0.02mm |
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*Please ask our competent staff for details including blade specifications and processing methods.